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| 2SC2922 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL MT-200 CONDITIONS VBE = 0V TYP VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 8.0A; IB = 0.8A IF = 8.0A IC=8A,IB1=-IB2=1A,VCC=40V 1.5 0.45 MAX 180 180 17 200 3 2.0 1.0 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 180 180 5 17 5 200 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=180V VEB=5V IC=1mA IC = 8A; IB = 0.8A IC = 2A; VCE = 5V IC = 2A; VCE = 12V VCB = 10V,f=1MHZ IC=8A.IB1=-IB2=1A,VCC=40V IC=8A.IB1=-IB2=1A,VCC=40V IC=8A.IB1=-IB2=1A,VCC=40V TYP 180 50 10 250 0.2 1.5 0.45 MAX 0.2 0.2 2 200 - UNIT mA mA V MHz pF us us us 1.0 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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